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SI7623DN Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI7623DN Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7623DN New Product Document Number: 62668 S12-1764-Rev. A, 23-Jul-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Gen III P-Channel Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Adaptor Switch • Battery Switch • Load Switch • Charger Switch Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile ( www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A) Qg (Typ.) - 20 0.0038 at VGS = - 10 V - 35a 55.5 nC 0.0053 at VGS = - 4.5 V - 35a 0.0090 at VGS = - 2.5 V - 35a Ordering Information: Si7623DN-T1-GE3 (Lead (Pb)-free and Halogen-free) 1 2 3 4 5 6 7 8 S S S G D D D D 3.3 mm 3.3 mm PowerPAK® 1212-8 Bottom View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 35a A TC = 70 °C - 35a TA = 25 °C - 22.6b, c TA = 70 °C - 18.2b, c Pulsed Drain Current (t = 300 µs) IDM - 80 Continuous Source-Drain Diode Current TC = 25 °C IS - 35a TA = 25 °C - 3.3b, c Avalanche Current L = 0.1 mH IAS - 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 52 W TC = 70 °C 33 TA = 25 °C 3.7b, c TA = 70 °C 2.4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 10 s RthJA 26 33 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 |
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