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SI2323DDS Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI2323DDS
Description  P-Channel 20-V (D-S) MOSFET
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Site Internet  http://www.vishay.com
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Vishay Siliconix
Si2323DDS
www.vishay.com
2
Document Number: 64004
S13-1165-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 13
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 2.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
- 1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
- 15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 4.1 A
0.032
0.039
VGS = - 2.5 V, ID = - 2 A
0.041
0.050
VGS = - 1.8 V, ID = - 1 A
0.058
0.075
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 4.1 A
18
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
1160
pF
Output Capacitance
Coss
135
Reverse Transfer Capacitance
Crss
120
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 8 V, ID = - 4.1 A
24
36
nC
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.1 A
13.6
21
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
2.2
Gate Resistance
Rg
f = 1 MHz
2
10
20
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 3.1 
ID  - 3.2 A, VGEN = - 4.5 V, Rg = 1 
24
36
ns
Rise Time
tr
22
40
Turn-Off Delay Time
td(off)
52
78
Fall Time
tf
11
20
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 3.1 
ID  - 3.2 A, VGEN = - 8 V, Rg = 1 
816
Rise Time
tr
918
Turn-Off Delay Time
td(off)
58
87
Fall Time
tf
918
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 1.4
A
Pulse Diode Forward Current
ISM
- 20
Body Diode Voltage
VSD
IS = - 3.2 A, VGS = 0 V
- 0.79
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C
14
25
ns
Body Diode Reverse Recovery Charge
Qrr
612
nC
Reverse Recovery Fall Time
ta
8
ns
Reverse Recovery Rise Time
tb
6


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