Moteur de recherche de fiches techniques de composants électroniques |
|
SI2323DDS Fiches technique(PDF) 2 Page - Vishay Siliconix |
|
SI2323DDS Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 10 page Vishay Siliconix Si2323DDS www.vishay.com 2 Document Number: 64004 S13-1165-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 13 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 2.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 4.1 A 0.032 0.039 VGS = - 2.5 V, ID = - 2 A 0.041 0.050 VGS = - 1.8 V, ID = - 1 A 0.058 0.075 Forward Transconductancea gfs VDS = - 10 V, ID = - 4.1 A 18 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 1160 pF Output Capacitance Coss 135 Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg VDS = - 10 V, VGS = - 8 V, ID = - 4.1 A 24 36 nC Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 4.1 A 13.6 21 Gate-Source Charge Qgs 2 Gate-Drain Charge Qgd 2.2 Gate Resistance Rg f = 1 MHz 2 10 20 Turn-On Delay Time td(on) VDD = - 10 V, RL = 3.1 ID - 3.2 A, VGEN = - 4.5 V, Rg = 1 24 36 ns Rise Time tr 22 40 Turn-Off Delay Time td(off) 52 78 Fall Time tf 11 20 Turn-On Delay Time td(on) VDD = - 10 V, RL = 3.1 ID - 3.2 A, VGEN = - 8 V, Rg = 1 816 Rise Time tr 918 Turn-Off Delay Time td(off) 58 87 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 1.4 A Pulse Diode Forward Current ISM - 20 Body Diode Voltage VSD IS = - 3.2 A, VGS = 0 V - 0.79 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C 14 25 ns Body Diode Reverse Recovery Charge Qrr 612 nC Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 6 |
Numéro de pièce similaire - SI2323DDS |
|
Description similaire - SI2323DDS |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |