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BAW56-G Fiches technique(PDF) 1 Page - Vishay Siliconix |
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BAW56-G Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAW56-G www.vishay.com Vishay Semiconductors Rev. 1.1, 25-Jun-13 1 Document Number: 85872 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode, Dual MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K(/box 08/3K per 7” reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switching dual diode with common anode • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Device on fiberglass substrate 1 3 2 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAW56-G BAW56-G3-08 or BAW56-G3-18 Dual diodes common anode JDG Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage = DC blocking voltage VR = VRRM 70 V Forward continuous current IF 250 mA Non repetitive peak forward current tp = 1 μs IFSM 2A tp = 1 ms IFSM 1A tp = 1 s IFSM 0.5 A Power dissipation (1) Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA (1) 430 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C |
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