SI5853DC datasheet(3/6 Pages) VISHAY

No de pièce	SI5853DC

Description	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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Si5853DC

Vishay Siliconix

Document Number: 71239

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 5 thru3V

TC =--55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

1.5 V

2V

2.5 V

0.6

0.8

1.0

1.2

1.4

1.6

--50

--25

0

25

50

75

100

125

150

0

1

2

3

4

5

0

1234

5

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0

2468

10

VDS -- Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS =10 V

ID =2.7 A

ID -- Drain Current (A)

VGS =4.5 V

ID =2.7 A

VGS =2.5 V

VGS =4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg -- Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ -- Junction Temperature (_C)

VGS =1.8 V

0

200

400

600

800

04

8

12

16

20

Numéro de pièce similaire - SI5853DC

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI5853DC-T1-E3	180Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. D, 08-Mar-10

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Description similaire - SI5853DC

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI5855DC	86Kb / 6P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. A, 07-Jul-03
	SI5855DC-T1-E3	188Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. C, 08-Mar-10
	SI5855DC	101Kb / 7P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 17-May-04
	SI5853DC-T1-E3	180Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. D, 08-Mar-10
	SI5856DC	88Kb / 6P	N-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 24-Nov-03
	SI5856DC	111Kb / 7P	N-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. C, 28-Feb-05
	SI1305DL	42Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Apr-03
	SI2311DS-T1-E3	214Kb / 8P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 24-Mar-08
	SI1407DL-T1	80Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 12-Jun-06
	SI4465ADY	216Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Jan-07

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