PH3230 datasheet(3/13 Pages) PHILIPS

No de pièce	PH3230

Description	N-channel enhancement mode field-effect transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PH3230

N-channel enhancement mode ﬁeld-effect transistor

Product data

Rev. 03 — 25 June 2003

3 of 13

9397 750 10949

VGS ≥ 10 V

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature.

IAR = 5 A; VDD = 15 V; duty cycle < 0.1%; RG ≥ 50 Ω

Fig 3.

Repetitive drain-source avalanche energy as a function of junction temperature.

03ah31

0

40

80

120

0

50

100

150

200

Tmb (°C)

Pder

(%)

03ag77

0

40

80

120

0

50

100

150

200

Tmb (°C)

Ider

(%)

P

der

P

tot

P

tot 25 C

°

()

----------------------

100%

×

=

I

der

I

D

I

D25 C

°

()

-------------------

100%

×

=

03aj93

0

1

2

3

4

0

50

100

150

Tj (°C)

EDS(AL)R

(mJ)

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Chino-Excel Technology	CEP13N10	98Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
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