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BAV21W-G Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BAV21W-G Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page BAV19W-G, BAV20W-G, BAV21W-G www.vishay.com Vishay Semiconductors Rev. 1.3, 13-May-13 2 Document Number: 85188 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1V IF = 200 mA VF 1250 mV Leakage current VR = 100 V BAV19W-G IR 100 nA VR = 100 V, Tj = 100 °C BAV19W-G IR 15 μA VR = 150 V BAV20W-G IR 100 nA VR = 150 V, Tj = 100 °C BAV20W-G IR 15 μA VR = 200 V BAV21W-G IR 100 nA VR = 200 V, Tj = 100 °C BAV21W-G IR 15 μA Dynamic forward resistance IF = 10 mA rf 5 Diode capacitance VR = 0, f = 1 MHz CD 1.5 pF Reverse recovery time IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 trr 50 ns 18858 1000 100 10 1 0.1 0.01 0 0.4 0.6 0.8 1 0.2 VF - Forward Voltage (V) Tj = 100 °C 25 °C 0.1 0.2 0.3 0 0 30 60 90 120 150 18859 Tamb - Ambient Temperature (°C) I Current (rectif.) O DC current IF 21937 Tamb - Ambient Temperature (°C) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 140 10 100 1 1 100 10 18861 IF - Forward Current (mA) |
Numéro de pièce similaire - BAV21W-G |
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Description similaire - BAV21W-G |
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