1N4448W-G datasheet(2/5 Pages) VISHAY

No de pièce	1N4448W-G

Description	Silicon epitaxial planar diode

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1N4448W-G

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Vishay Semiconductors

Rev. 1.0, 13-May-13

2

Document Number: 85409

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Characteristics

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 5 mA

VF

0.62

0.72

V

IF = 100 mA

VF

1V

Leakage current

VR = 20 V

IR

25

nA

VR = 75 V

IR

5μA

VR = 20 V, TJ = 150 °C

IR

50

μA

Capacitance

VF = VR = 0 V

4

pF

Reverse recovery time

IF = 10 mA, iR = 1 mA,

VR = 6 V, RL = 100 

trr

4ns

18105

VF (V)

T

j = 100 °C

T

j = 25 °C

10- 2

10- 1

102

103

1

10

12

0

17438

f = 1 kHz

T

j = 25 °C

IF (mA)

10

2

10

3

10

4

10

-2

10

-1

110

2

10

2

5

2

5

2

5

2

5

17439

mW

T

amb

P

tot

300

500

700

1000

100

200 °C

100

200

400

600

800

900

0

17440

VR (V)

0.7

0.8

0.9

1.0

1.1

f = 1 MHz

T

j = 25 °C

2

08

6

410

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