1N4148W datasheet(2/5 Pages) VISHAY

No de pièce	1N4148W

Description	Small Signal Fast Switching Diode

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1N4148W

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Vishay Semiconductors

Rev. 1.7, 08-May-13

2

Document Number: 85748

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Characteristics

Fig. 2 - Dynamic Forward Resistance vs. Forward Current

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Relative Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 10 mA

VF

1V

IF = 100 mA

VF

1.2

V

Leakage current

VR = 20 V

IR

25

nA

VR = 75 V

IR

5μA

VR = 100 V

IR

100

μA

VR = 20 V, TJ = 150 °C

IR

50

μA

Diode capacitance

VF = VR = 0 V

CD

4pF

Voltage rise when switching ON

Tested with 50 mA pulses,

tp = 0.1 μs, rise time < 30 ns,

fp = (5 to 100) kHz

Vfr

2.5

V

Reverse recovery time

IF = 10 mA, iR = 1 mA, VR = 6 V,

RL = 100 

trr

4ns

17437

0

1

2

V

F (V)

10

-1

10

-2

1

10

2

10

3

T

j = 100 °C

T

j = 25 °C

17438

f = 1 kHz

T

j = 25 °C

IF (mA)

10

2

10

3

10

4

10

-2

10

-1

110

2

10

2

5

2

5

2

5

2

5

0

50

100

150

200

250

300

350

400

450

500

0

50

100

150

T

amb - Ambient Temperature (°C)

20809

17440

VR (V)

0.7

0.8

0.9

1.0

1.1

f = 1 MHz

T

j = 25 °C

2

08

6

410

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