SI7925DN datasheet(2/6 Pages) VISHAY

No de pièce	SI7925DN

Description	Dual P-Channel 12-V (D-S) MOSFET

Download	6 Pages

Scroll/Zoom	100%

Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

Logo

2 / 6 page

www.vishay.com

2

Document Number: 72343

S-81544-Rev. C, 07-Jul-08

Vishay Siliconix

Si7925DN

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.40

- 1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 12 V, VGS = 0 V

- 1

µA

VDS = - 12 V, VGS = 0 V, TJ = 85 °C

- 5

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 6.5 A

0.033

0.042

Ω

VGS = - 2.5 V, ID = - 5.5 A

0.046

0.058

VGS = - 1.8 V, ID = - 1.2 A

0.065

0.082

Forward Transconductancea

gfs

VDS = - 6 V, ID = - 6.5 A

19

S

Diode Forward Voltagea

VSD

IS = - 2.1 A, VGS = 0 V

- 0.8

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 6 V, VGS = - 4.5 V, ID = - 6.5 A

11

12

nC

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

2.8

Gate Resistance

Rg

8.2

Ω

Turn-On Delay Time

td(on)

VDD = - 6 V, RL = 6 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω

20

30

ns

Rise Time

tr

50

75

Turn-Off Delay Time

td(off)

70

105

Fall Time

tf

50

75

Source-Drain Reverse Recovery Time

trr

IF = - 2.1 A, dI/dt = 100 A/µs

41

80

Output Characteristics

0

4

8

12

16

20

0

123

456

VGS = 5 thru 2.5 V

2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

1 V

Transfer Characteristics

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

TC = - 55 °C

125 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Numéro de pièce similaire - SI7925DN

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI7925DN	116Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7925DN	116Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022

More results

Description similaire - SI7925DN

Fabricant	No de pièce	Fiches technique	Description
Analog Power	AM6923P	186Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI4933DY	44Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. B, 25-Nov-02
	SI1917EDH	119Kb / 6P	Dual P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI4933DY	110Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
	SI7909DN	91Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
	SIA975DJ	356Kb / 9P	Dual P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI7909DN	185Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. C, 27-Jun-05
	SI6913DQ-T1-E3	222Kb / 11P	Dual P-Channel 12 V (D-S) MOSFET Rev. C, 11-Jun-12
	SI6913DQ	79Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI5943DU	272Kb / 3P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 24-Jul-06
	SI3973DV	55Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. D, 29-Mar-04

More results

SI7925DN Fiches technique(PDF) 2 Page - Vishay Siliconix

SI7925DN Fiches technique(HTML) 2 Page - Vishay Siliconix

Numéro de pièce similaire - SI7925DN

Description similaire - SI7925DN

Html Pages

1 2 3 4 5 6

Fiches technique Télécharger

Lien URL