BAW56WT1G datasheet(3/4 Pages) ONSEMI

No de pièce	BAW56WT1G

Description	Dual Switching Diode, Common Anode

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Fabricant	ONSEMI [ON Semiconductor]

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BAW56WT1G, SBAW56WT1G

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TYPICAL CHARACTERISTICS

100

0.2

0.4

VF, FORWARD VOLTAGE (VOLTS)

0.6

0.8

1.0

1.2

10

1.0

0.1

TA = 85°C

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

10

20

30

40

50

1.75

0

VR, REVERSE VOLTAGE (VOLTS)

1.5

1.25

1.0

0.75

24

6

8

Figure 2. Forward Voltage

Figure 3. Leakage Current

Figure 4. Capacitance

TA = -40°C

TA = 25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 55°C

TA = 25°C

Numéro de pièce similaire - BAW56WT1G

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BAW56WT1G	118Kb / 4P	Dual Switching Diode, Common Anode February, 2007 ??Rev. 5
	BAW56WT1G	124Kb / 4P	Dual Switching Diode, Common Anode October, 2010 -- Rev. 6
	BAW56WT1G	133Kb / 4P	Dual Switching Diode, Common Anode November, 2011 ??Rev. 7

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Description similaire - BAW56WT1G

Fabricant	No de pièce	Fiches technique	Description
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	M1MA141WAT1	46Kb / 4P	COMMON ANODE DUAL SWITCHING DIODE July, 2004 ??Rev. 7
	SBAW56WT1G	133Kb / 4P	Dual Switching Diode, Common Anode November, 2011 ??Rev. 7
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