© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 10

1

Publication Order Number:

BAV199LT1/D

BAV199L, SBAV199L

Dual Series Switching

Diode

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

70

Vdc

Forward Current

215

mAdc

Peak Forward Surge Current

500

mAdc

Repetitive Peak Reverse Voltage

70

Vdc

Average Rectified Forward Current

(Note 1)

(Averaged Over Any 20 ms Period)

715

mAdc

Repetitive Peak Forward Current

450

mAdc

Non−Repetitive Peak Forward Current

t = 1.0

ms

t = 1.0 ms

t = 1.0 s

2.0

1.0

0.5

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−65 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Device

Package

ORDERING INFORMATION

CASE 318

SOT−23

STYLE 11

MARKING DIAGRAM

JY M

G

G

3

CATHODE/ANODE

ANODE

1

CATHODE

2

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAV199LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

JY = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

SBAV199LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

SBAV199LT3G

SOT−23

(Pb−Free)

10,000 /

Tape & Reel

www.onsemi.com