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BAS21LT3G Fiches technique(PDF) 2 Page - ON Semiconductor |
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BAS21LT3G Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page BAS19L, BAS20L, BAS21L, BAS21DW5 www.onsemi.com 2 THERMAL CHARACTERISTICS (SOT−23) Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance Junction−to−Ambient (SOT−23) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SC−88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) PD 385 mW Thermal Resistance − Junction−to−Ambient Derate Above 25 °C RqJA 328 3.0 °C/W mW/ °C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 2. FR−5 = 1.0 0.75 0.062 in. 3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current (VR = 100 Vdc) BAS19 (VR = 150 Vdc) BAS20 (VR = 200 Vdc) BAS21 (VR = 100 Vdc, TJ = 150°C) BAS19 (VR = 150 Vdc, TJ = 150°C) BAS20 (VR = 200 Vdc, TJ = 150°C) BAS21 IR − − − − − − 0.1 0.1 0.1 100 100 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) BAS19 (IBR = 100 mAdc) BAS20 (IBR = 100 mAdc) BAS21 V(BR) 120 200 250 − − − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1.0 1.25 Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
Numéro de pièce similaire - BAS21LT3G |
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Description similaire - BAS21LT3G |
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