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SI7972DP Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI7972DP Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Si7972DP www.vishay.com Vishay Siliconix S16-1448-Rev. A, 25-Jul-16 2 Document Number: 75360 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 μs, duty cycle 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient V DS/TJ ID = 250 μA - 38 - mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ ID = 250 μA - -4.9 - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.2 - 2.7 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 1 μA VDS = 60 V, VGS = 0 V, TJ = 85 °C - - 10 On-State Drain Current b ID(on) VDS 5 V, VGS = 10 V 60 - - A Drain-Source On-State Resistance b RDS(on) VGS = 10 V, ID = 11 A - 0.015 0.018 VGS = 4.5 V, ID = 10 A - 0.017 0.021 Forward Transconductance b gfs VDS = 30 V, ID = 11 A - 38 - S Dynamic a Input Capacitance Ciss VDS = 30 V, VGS = 0 V, f = 1 MHz - 1050 - pF Output Capacitance Coss - 435 - Reverse Transfer Capacitance Crss -20- Total Gate Charge Qg VDS = 30 V, VGS = 10 V, ID = 11 A - 15.2 23 nC VDS = 30 V, VGS = 4.5 V, ID = 11 A -7.1 11 Gate-Source Charge Qgs -4.4 - Gate-Drain Charge Qgd -1.3 - Gate Resistance Rg f = 1 MHz 0.12 0.6 1.2 Turn-On Delay Time td(on) VDD = 30 V, RL = 3.45 ID 8.7 A, VGEN = 4.5 V, Rg = 1 - 15 120 ns Rise Time tr -80 30 Turn-Off Delay Time td(off) -15 30 Fall Time tf -15 30 Turn-On Delay Time td(on) VDD = 30 V, RL = 3.45 ID 8.7 A, VGEN = 10 V, Rg = 1 -10 15 Rise Time tr -25 40 Turn-Off Delay Time td(off) -20 30 Fall Time tf -10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - - 8 A Pulse Diode Forward Current a ISM -- 40 Body Diode Voltage VSD IS = 8.7 A - 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 8.7 A, dI/dt = 100 A/μs, TJ = 25 °C -34 51 ns Body Diode Reverse Recovery Charge Qrr -30 45 nC Reverse Recovery Fall Time ta -16- ns Reverse Recovery Rise Time tb -18- |
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