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SI7540ADP Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SI7540ADP
Description  N-and P-Channel 20 V (D-S) MOSFET
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Si7540ADP
www.vishay.com
Vishay Siliconix
S16-2274-Rev. C, 14-Nov-16
1
Document Number: 62951
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N- and P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFETs
• Thermally enhanced PowerPAK®
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
•DC/DC converters
• Synchronous buck converter
• Synchronous rectifier
•Load switch
• Motor drive switch
Notes
a. Based on silicon capability only.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
PRODUCT SUMMARY
N-CHANNEL
P-CHANNEL
VDS (V)
20
-20
RDS(on) () at VGS = ± 4.5 V
0.0150
0.0280
RDS(on) () at VGS = ± 2.5 V
0.0195
0.0430
Qg typ. (nC)
8.5
16
ID (A) a, b
12
9
Configuration
N- and p-pair
PowerPAK® SO-8 Dual
Top View
1
6.15
mm
5.15
mm
Bottom View
4
G
2
4
1
S
1
2
G
1
3
S
2
D
1
8
D
2
6
D
1
7
D
2
5
N-Channel MOSFET
G1
D1
S1
S2
G2
D2
P-Channel MOSFET
ORDERING INFORMATION
Package
PowerPAK SO-8
Lead (Pb)-free and halogen-free
Si7540ADP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
10 s
STEADY
10 s
STEADY
Drain-source voltage
VDS
20
-20
V
Gate-source voltage
VGS
± 12
Continuous drain current (TJ = 150 °C) a, b
TA = 25 °C
ID
12
8
-9
-6.1
A
TA = 70 °C
9.8
6.5
-7.3
-4.9
Pulsed drain current
IDM
35
-25
Continuous source current (diode conduction) b
IS
2.9
1.3
-2.9
-1.3
Maximum power dissipation b
TA = 25 °C
PD
3.5
1.6
3.5
1.6
W
TA = 70 °C
2.3
1
2.3
1
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Soldering recommendations (peak temperature) d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
TYP.
MAX.
TYP.
MAX.
Maximum junction-to-ambient b, f
t
 10 s
RthJA
25
35
25
35
°C/W
Maximum junction-to-case (drain)
Steady state
RthJC
4.6
6
4.8
6.3


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