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SI7540ADP Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI7540ADP Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 18 page Si7540ADP www.vishay.com Vishay Siliconix S16-2274-Rev. C, 14-Nov-16 1 Document Number: 62951 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N- and P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® power MOSFETs • Thermally enhanced PowerPAK® • 100 % Rg tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS •DC/DC converters • Synchronous buck converter • Synchronous rectifier •Load switch • Motor drive switch Notes a. Based on silicon capability only. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) 20 -20 RDS(on) () at VGS = ± 4.5 V 0.0150 0.0280 RDS(on) () at VGS = ± 2.5 V 0.0195 0.0430 Qg typ. (nC) 8.5 16 ID (A) a, b 12 9 Configuration N- and p-pair PowerPAK® SO-8 Dual Top View 1 6.15 mm 5.15 mm Bottom View 4 G 2 4 1 S 1 2 G 1 3 S 2 D 1 8 D 2 6 D 1 7 D 2 5 N-Channel MOSFET G1 D1 S1 S2 G2 D2 P-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free and halogen-free Si7540ADP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT 10 s STEADY 10 s STEADY Drain-source voltage VDS 20 -20 V Gate-source voltage VGS ± 12 Continuous drain current (TJ = 150 °C) a, b TA = 25 °C ID 12 8 -9 -6.1 A TA = 70 °C 9.8 6.5 -7.3 -4.9 Pulsed drain current IDM 35 -25 Continuous source current (diode conduction) b IS 2.9 1.3 -2.9 -1.3 Maximum power dissipation b TA = 25 °C PD 3.5 1.6 3.5 1.6 W TA = 70 °C 2.3 1 2.3 1 Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT TYP. MAX. TYP. MAX. Maximum junction-to-ambient b, f t 10 s RthJA 25 35 25 35 °C/W Maximum junction-to-case (drain) Steady state RthJC 4.6 6 4.8 6.3 |
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