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KM29W040AT Fiches technique(PDF) 11 Page - Samsung semiconductor

No de pièce KM29W040AT
Description  512K x 8 bit NAND Flash Memory
Download  22 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM29W040AT Fiches technique(HTML) 11 Page - Samsung semiconductor

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KM29W040AT, KM29W040AIT
FLASH MEMORY
11
System Interface Using CE don’t-care.
CE
WE
tWP
tCH
tCS
Start Add.(3Cycle)
80H
Data Input
CE
CLE
ALE
WE
I/O0~7
Data Input
CE don’t-care
10H
For a easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
32byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Start Add.(3Cycle)
00H
CE
CLE
ALE
WE
I/O0~7
Data Output(sequential)
CE don’t-care
R/B
tR
RE
tCEA
out
tREA
(Max. 60ns)
CE
RE
I/O0~7
Timing requirements : If CE is is exerted high during sequential
data-reading, the falling edge of CE to valid data(tCEA) must
be kept greater than 60ns.
Figure 3. Program Operation with CE don’t-care.
Figure 4. Read Operation with CE don’t-care.


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