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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRFPS40N60K Fiches technique(PDF) 2 Page - International Rectifier |
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IRFPS40N60K Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFPS40N60K 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 24A Qg Total Gate Charge ––– ––– 330 ID = 38A Qgs Gate-to-Source Charge ––– ––– 84 nC VDS = 480V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 150 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 47 ––– VDD = 300V tr Rise Time ––– 110 ––– ID = 38A td(off) Turn-Off Delay Time ––– 97 ––– RG = 4.3Ω tf Fall Time ––– 60 ––– VGS = 10V,See Fig. 10 Ciss Input Capacitance ––– 7970 ––– VGS = 0V Coss Output Capacitance ––– 750 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 75 ––– pF ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 9440 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 200 ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 260 ––– VGS = 0V, VDS = 0V to 480V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 600 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.110 0.130 Ω VGS = 10V, ID = 24A VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA ––– ––– 50 µA VDS = 600V, VGS = 0V ––– ––– 250 VDS = 480V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature.(See Fig. 11) I SD ≤ 38A, di/dt ≤ 224A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting T J = 25°C, L = 0.84mH, RG = 25Ω, IAS = 38A, (See Figure 12a) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 40 MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 160 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 38A, VGS = 0V ––– 630 950 TJ = 25°C IF = 38A ––– 730 1090 TJ = 125°C di/dt = 100A/µs ––– 14 20 TJ = 25°C ––– 17 25 TJ = 125°C IRRM Reverse Recovery Current ––– 39 58 A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) trr Reverse Recovery Time Qrr Reverse Recovery Charge ns µC Rθ is measured at TJ approximately 90°C |
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