BAT54CXV3 datasheet(2/4 Pages) ONSEMI

No de pièce	BAT54CXV3

Description	Dual Series Schottky Barrier Diodes

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Fabricant	ONSEMI [ON Semiconductor]

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BAT54CXV3

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V(BR)R

30

−

V

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

CT

−

7.6

10

pF

Reverse Leakage

(VR = 25 V)

IR

−

0.5

2.0

mAdc

Forward Voltage

(IF = 0.1 mA)

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 30 mA)

(IF = 100 mA)

VF

−

0.22

0.29

0.35

0.41

0.52

0.24

0.32

0.40

0.50

0.80

V

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

−

5.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2 k

820

W

0.1

mF

DUT

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

T

10%

90%

IF

IR

trr

T

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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