FDD6680 datasheet(3/6 Pages) FAIRCHILD

No de pièce	FDD6680

Description	30V N-Channel PowerTrench MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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3 / 6 page

FDD6680/FDU6680 Rev. C1(W)

D

R

P

DS(ON)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

2.3

A

VSD

Drain–Source Diode Forward Voltage

VGS = 0 V,

IS = 2.3 A

(Note 2)

0.76

1.2

V

trr

Diode Reverse Recovery Time

24

nS

Qrr

Diode Reverse Recovery Charge

IF = 12 A,

diF/dt = 100 A/µs

13

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) RθJA = 45°C/W when mounted on a

1in

2 pad of 2 oz copper

b) RθJA = 96°C/W when mounted

on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

3. Maximum current is calculated as:

where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A

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