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ZR12D Fiches technique(PDF) 2 Page - Zetex Semiconductors

No de pièce ZR12D
Description  PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZR12D Fiches technique(HTML) 2 Page - Zetex Semiconductors

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ABSOLUTE MAXIMUM RATING
Reverse Current
25mA
Forward Current
25mA
Operating Temperature
-40 to 85°C
Storage Temperature
-55 to 125°C
Power Dissipation (Tamb=25°C)
SOT23
330mW
Reverse Characteristics
Reverse Voltage (V)
0
0.2
0.4
0.8
1.4
0.6
1.0
0
10
20
30
40
50
60
TA
=25°C
TA
=-
40°C
TA
=85°C
1.2
ZR12D
ELECTRICAL CHARACTERISTICS
TEST CONDITIONS (Unless otherwise stated) Tamb=25°C
SYMBOL PARAMETER
CONDITIONS
LIMITS
TOL.
%
UNITS
MIN
TYP MAX
VR
Reverse Breakdown
Voltage
I
R=150µA
1.21
1.25 1.29
3
V
IMIN
Minimum Operating
Current
30
50
µA
IR
Recommended
Operating Current
0.05
5
mA
TC
Average Reverse Breakdown
Voltage Temp. Co.
IR(min) to
IR(max)
30
90
ppm/°C
RS §
Slope Resistance
0.65 2
ZR
Reverse Dynamic
Impedance
IR = 1mA
f = 100Hz
IAC= 0.1 IR
0.5
1
EN
Wideband Noise Voltage
IR= 150µA
f = 100Hz to
10kHz
60
µV(rms)
TC =
(VR(max)−VR(min)) x 1000000
VR x (T(max)−T(min))
Note: VR(max) - VR(min) is the maximum
deviation in reference voltage measured
over the full operating temperature
range.
§
RS =
VR Change(IR (min) to IR (max))
IR (max) − IR (min)
4-151


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