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TS87C51RD2 Fiches technique(PDF) 7 Page - ATMEL Corporation |
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TS87C51RD2 Fiches technique(HTML) 7 Page - ATMEL Corporation |
7 / 17 page Qualpack TS87C51RD2/TS83C51RD2 June 2001 7 Atmel Wireless & Microcontrollers 4.2 Wafer Process Qualification 4.2.1 Process Module Reliability This chapter contains all the information relative to the reliability of the SCMOS3 NV technology. Results presented in the following sections concern the reliability of the basic process steps which build up the technology. 4.2.1.1 Hot carrier qualification STATIC NMOS DEGRADATION Channel length in µm 0.5 0.55 0.6 0.65 0.7 0.5 Process corner Fast Fast Fast Fast Fast Typical Substrate current in µA/µm VD=5.5V, VG=2.25V 17 15 13.4 12.1 11.1 14.7 Substrate current in µA/µm VD=3.6V, VG=1.6V 0.35 0.3 0.25 0.22 0.2 0.3 Lifetime in seconds for 10% shift of Gm at VD=5.5V 3.2e3 3.7e3 4.2e3 4.7e3 5.2e3 3.8e3 Lifetime in seconds for 10% shift of Gm at VD=3.6V 8e7 10e7 12e7 14e7 16e7 10e7 STATIC PMOS DEGRADATION Channel length in µm 0.5 0.55 0.6 0.65 0.7 0.5 Process corner Fast Fast Fast Fast Fast Typical Substrate current in µA/µm VD=5.5V, VG=2.25V 0.31 0.28 0.25 0.22 0.21 0.24 Substrate current in µA/µm VD=3.6V VG=1.25V 2.3e-3 1.9e-3 1.6e-3 1.4e-3 1.1e-3 1.6e-3 Lifetime in seconds for 10% shift of Gm at VD=5.5V 2.7e4 3.1e4 3.5e4 3.9e4 4.3e4 3.5e4 Lifetime in seconds for 10% shift of Gm at VD=3.6V 2e7 2.5e7 3e7 3.8e7 4.6e7 3.2e7 EXPERIMENTAL RESULTS IN DYNAMIC MODE : hot carrier degradation effects on inverter propagation time have been measured on oscillators running at 75 MHz at 7V and 6.5V. Accelerator factor in voltage is then carried out and expected degradation laws at 5V and 3.3V derived. The following graphs show the frequency degradation of oscillators running at 5V and 3.3V. |
Numéro de pièce similaire - TS87C51RD2 |
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Description similaire - TS87C51RD2 |
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