Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

MTB9DP03V8-0-T6-G Fiches technique(PDF) 8 Page - Cystech Electonics Corp.

No de pièce MTB9DP03V8-0-T6-G
Description  P-Channel Enhancement Mode Power MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  CYSTEKEC [Cystech Electonics Corp.]
Site Internet  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB9DP03V8-0-T6-G Fiches technique(HTML) 8 Page - Cystech Electonics Corp.

  MTB9DP03V8-0-T6-G Datasheet HTML 1Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 2Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 3Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 4Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 5Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 6Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 7Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 8Page - Cystech Electonics Corp. MTB9DP03V8-0-T6-G Datasheet HTML 9Page - Cystech Electonics Corp.  
Zoom Inzoom in Zoom Outzoom out
 8 / 9 page
background image
CYStech Electronics Corp.
Spec. No. : C050V8
Issued Date : 2017.01.24
Revised Date :
Page No. : 8/9
MTB9D0P03V8
CYStek Product Specification
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5
°C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3
°C/second max.
3
°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100
°C
150
°C
60-120 seconds
150
°C
200
°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183
°C
60-150 seconds
217
°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5
°C
260 +0/-5
°C
Time within 5
°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6
°C/second max.
6
°C/second max.
Time 25
°C to peak temperature
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.


Numéro de pièce similaire - MTB9DP03V8-0-T6-G

FabricantNo de pièceFiches techniqueDescription
logo
Cystech Electonics Corp...
MTB9D0N10RE3 CYSTEKEC-MTB9D0N10RE3 Datasheet
402Kb / 8P
   N-Channel Enhancement Mode Power MOSFET
MTB9D0N10RE3-0-UB-X CYSTEKEC-MTB9D0N10RE3-0-UB-X Datasheet
402Kb / 8P
   N-Channel Enhancement Mode Power MOSFET
MTB9D0N10RQ8 CYSTEKEC-MTB9D0N10RQ8 Datasheet
484Kb / 9P
   N-Channel Enhancement Mode Power MOSFET
MTB9D0N10RQ8-0-T3-G CYSTEKEC-MTB9D0N10RQ8-0-T3-G Datasheet
484Kb / 9P
   N-Channel Enhancement Mode Power MOSFET
MTB9D0P03H8 CYSTEKEC-MTB9D0P03H8 Datasheet
611Kb / 11P
   P-Channel Enhancement Mode Power MOSFET
More results

Description similaire - MTB9DP03V8-0-T6-G

FabricantNo de pièceFiches techniqueDescription
logo
GTM CORPORATION
G3401 GTM-G3401 Datasheet
308Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GP4953 GTM-GP4953 Datasheet
301Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GM162 GTM-GM162 Datasheet
365Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G2U4407 GTM-G2U4407 Datasheet
298Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G3J14 GTM-G3J14 Datasheet
377Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
G1333 GTM-G1333 Datasheet
352Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9585 GTM-GJ9585 Datasheet
236Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GI20P02 GTM-GI20P02 Datasheet
245Kb / 5P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GI405 GTM-GI405 Datasheet
253Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS4913 GTM-GSS4913 Datasheet
290Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSS4955 GTM-GSS4955 Datasheet
350Kb / 4P
   P-CHANNEL ENHANCEMENT MODE POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com