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MTB095N10KRN3-0-T1-G Fiches technique(PDF) 5 Page - Cystech Electonics Corp. |
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MTB095N10KRN3-0-T1-G Fiches technique(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C714N3 Issued Date : 2017.01.13 Revised Date : Page No. : 5/9 MTB095N10KRN3 Preliminary CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 01 23 45 Qg, Total Gate Charge(nC) ID=1.9A VDS=50V VDS=20V VDS=80V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs RDS(ON) Limited TA=25°C, Tj=150°, VGS=10V RθJA=100°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=100°C/W |
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Description similaire - MTB095N10KRN3-0-T1-G |
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