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AD5675RBRUZ Fiches technique(PDF) 6 Page - Analog Devices

No de pièce AD5675RBRUZ
Description  Base station power amplifiers
Download  32 Pages
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Fabricant  AD [Analog Devices]
Site Internet  http://www.analog.com
Logo AD - Analog Devices

AD5675RBRUZ Fiches technique(HTML) 6 Page - Analog Devices

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AD5671R/AD5675R
Data Sheet
Rev. B | Page 6 of 32
A Grade
B Grade
Parameter
Min
Typ
Max
Min
Typ
Max
Unit
Test Conditions/Comments
Long-Term Stability/Drift2
12
12
ppm
After 1000 hours at 125°C
Thermal Hysteresis2
125
125
ppm
First cycle
25
25
ppm
Additional cycles
LOGIC INPUTS2
Input Current
±1
±1
µA
Per pin
Input Voltage
Low, VINL
0.3 ×
VLOGIC
0.3 ×
VLOGIC
V
High, VINH
0.7 ×
VLOGIC
0.7 ×
VLOGIC
V
Pin Capacitance
3
3
pF
LOGIC OUTPUTS (SDA)2
Output Voltage
Low, VOL
0.4
0.4
V
ISINK = 200 μA
High, VOH
VLOGIC
0.4
VLOGIC
0.4
V
ISOURCE = 200 μA
Floating State Output Capacitance
4
4
pF
POWER REQUIREMENTS
VLOGIC
1.8
5.5
1.8
5.5
V
ILOGIC
3
3
µA
Power-on, −40°C + 105°C
3
3
µA
Power-on, −40°C + 125°C
3
3
µA
Power-down, −40°C + 105°C
3
3
µA
Power-down, −40°C + 125°C
VDD
2.7
5.5
2.7
5.5
V
Gain = 1
VREF +
1.5
5.5
VREF +
1.5
5.5
V
Gain = 2
IDD
VIH = VDD, VIL = GND,
VDD = 2.7 V to 5.5 V
Normal Mode9
1.1
1.26
1.1
1.26
mA
Internal reference off,
−40°C to +85°C
1.8
2.0
1.8
2.0
mA
Internal reference on,
−40°C to +85°C
1.1
1.3
1.1
1.3
mA
Internal reference off
1.8
2.1
1.8
2.1
mA
Internal reference on
All Power-Down Modes10
1
1.7
1
1.7
µA
Tristate to 1 kΩ,
−40°C to +85°C
1
1.7
1
1.7
µA
Power down to 1 kΩ,
−40°C to +85°C
1
2.5
1
2.5
µA
Tristate, −40°C to +105°C
1
2.5
1
2.5
µA
Power down to 1 kΩ,
−40°C to +105°C
1
5.5
1
5.5
µA
Tristate to 1 kΩ, −40°C to +125°C
1
5.5
1
5.5
µA
Power down to 1 kΩ,
−40°C to +125°C
1
DC specifications tested with the outputs unloaded, unless otherwise noted. Upper dead band = 10 mV and exists only when VREF = VDD with gain = 1, or when VREF/2 =
VDD with gain = 2. Linearity calculated using a reduced code range of 256 to 65,280.
2
Guaranteed by design and characterization; not production tested.
3
Together, Channel 0, Channel 1, Channel 2, and Channel 3 can source/sink 40 mA. Similarly, together, Channel 4, Channel 5, Channel 6, and Channel 7 can source/sink
40 mA up to a junction temperature of 125°C.
4
VDD = 5 V. The devices include current limiting to protect the devices during temporary overload conditions. Junction temperature can be exceeded during current
limit. Operation above the specified maximum operation junction temperature may impair device reliability.
5
When drawing a load current at either rail, the output voltage headroom with respect to that rail is limited by the 25 Ω typical channel resistance of the output
devices. For example, when sinking 1 mA, the minimum output voltage = 25 Ω × 1 mA = 25 mV.
6
Initial accuracy presolder reflow is ±750 µV; output voltage includes the effects of preconditioning drift. See the Internal Reference and Amplifier Gain Selection
section.
7
Reference is trimmed and tested at two temperatures and is characterized from −40°C to +125°C.
8
Reference temperature coefficient calculated as per the box method. See the Terminology section for further information.
9
Interface inactive. All DACs active. DAC outputs unloaded.
10
All DACs powered down.


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