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SS14T3 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce SS14T3
Description  PNP Transistor
Download  5 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SS14T3 Fiches technique(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
NSS12100UW3/D
NSS12100UW3TCG
12 V, 1 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
High Current Capability (1 A)
High Power Handling (Up to 740 mW)
Low VCE(s) (200 mV Typical @ 500 mA)
Small Size
Low Noise
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−12
Vdc
Collector-Base Voltage
VCBO
−12
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−1.0
−2.0
Adc
Electrostatic Discharge
ESD
HBM Class 3B
MM Class C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
12 VOLTS, 1.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 400 mW
Device
Package
Shipping
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
WDFN3
CASE 506AU
NSS12100UW3TCG
WDFN3
(Pb−Free)
3000/
Tape & Reel
1
VG = Specific Device Code
M
= Date Code
G
= Pb−Free Package
VG M
G
1
MARKING DIAGRAM
2
3
COLLECTOR
3
1
BASE
2
EMITTER
NSV12100UW3TCG
WDFN3
(Pb−Free)
3000/
Tape & Reel


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