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MJE5850 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce MJE5850
Description  Switch-mode Series PNP Silicon Power Transistors
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5850 Fiches technique(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 7
1
Publication Order Number:
MJE5850/D
MJE5850, MJE5851,
MJE5852
Switch-mode Series PNP
Silicon Power Transistors
The MJE5850, MJE5851 and the MJE5852 transistors are designed
for high−voltage, high−speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line operated
switch−mode applications.
Features
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn−Off Times
Operating Temperature Range −65 to +150_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
Complementary to the MJE13007 Series
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
VCEO(sus)
300
350
400
Vdc
Collector−Emitter Voltage
MJE5850
MJE5851
MJE5852
VCEV
350
400
450
Vdc
Emitter Base Voltage
VEB
6.0
Vdc
Collector Current − Continuous (Note 1)
IC
8.0
Adc
Collector Current − Peak (Note 1)
ICM
16
Adc
Base Current − Continuous (Note 1)
IB
4.0
Adc
Base Current − Peak (Note 1)
IBM
8.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
80
0.640
W
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
8 AMPERE
PCP SILICON
POWER TRANSISTORS
300−350−400 VOLTS
80 WATTS
TO−220
CASE 221A−09
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
2
3
MJE585x =
Device Code
x = 0, 1, or 2
G
=
Pb−Free Package
A
=
Assembly Location
Y
=
Year
WW
=
Work Week
MJE585xG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2, 4
4


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