BTA208X-800C datasheet(2/4 Pages) PHILIPS

No de pièce	BTA208X-800C

Description	Three quadrant triacs high commutation

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Preliminary specification

Three quadrant triacs

BTA208X series C

high commutation

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

hs = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

R.M.S. isolation voltage from all

f = 50-60 Hz; sinusoidal

-

2500

V

three terminals to external

waveform;

heatsink

R.H.

≤ 65% ; clean and dustfree

C

isol

Capacitance from T2 to external f = 1 MHz

-

10

-

pF

heatsink

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-hs

Thermal resistance

full or half cycle

junction to heatsink

with heatsink compound

-

4.5

K/W

without heatsink compound

-

6.5

K/W

R

th j-a

Thermal resistance

in free air

-

55

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

GT

Gate trigger current

2

V

D = 12 V; IT = 0.1 A

T2+ G+

2

-

35

mA

T2+ G-

2

-

35

mA

T2- G-

2

-

35

mA

I

L

Latching current

V

D = 12 V; IGT = 0.1 A

T2+ G+

-

20

mA

T2+ G-

-

30

mA

T2- G-

-

20

mA

I

H

Holding current

V

D = 12 V; IGT = 0.1 A

-

15

mA

V

T

On-state voltage

I

T = 10 A

-

1.3

1.65

V

GT

Gate trigger voltage

V

D = 12 V; IT = 0.1 A

-

0.7

1.5

V

D = 400 V; IT = 0.1 A; Tj = 125 ˚C

0.25

0.4

-

V

I

D

Off-state leakage current

V

D = VDRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

dV

D/dt

Critical rate of rise of

V

DM = 67% VDRM(max); Tj = 125 ˚C; exponential

1000

-

V/

µs

off-state voltage

waveform; gate open circuit

dI

com/dt

Critical rate of change of

V

DM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without

3

14

A/ms

commutating current

snubber; gate open circuit

t

gt

Gate controlled turn-on

I

TM = 12 A; VD = VDRM(max); IG = 0.1 A;

-

2

µs

time

dI

G/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

October 1997

2

Rev 1.000

Numéro de pièce similaire - BTA208X-800C

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BTA208X-800C	20Kb / 4P	Three quadrant triacs high commutation October 1999
WeEn Semiconductors	BTA208X-800CT	507Kb / 12P	3Q Hi-Com Triac
WeEn Semiconductors	BTA208X-800CTQ	507Kb / 12P	3Q Hi-Com Triac

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Description similaire - BTA208X-800C

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BTA212B	49Kb / 6P	Three quadrant triacs high commutation September 1997 Rev 1.200
	BTA216X	49Kb / 5P	Three quadrant triacs high commutation October 1999 Rev 1.000
	BTA212XB	54Kb / 6P	Three quadrant triacs high commutation September 1997 Rev 1.200
WeEn Semiconductors	BTA212B	923Kb / 8P	Three quadrant triacs high commutation
NXP Semiconductors	BTA208X-1000C0	196Kb / 12P	High commutation three-quadrant triacs Rev. 01-3 September 2009
	BTA208B	22Kb / 4P	Three quadrant triacs high commutation September 1997 Rev 1.200
	BTA212	45Kb / 4P	Three quadrant triacs high commutation October 1997 Rev 1.000
	BTA212B	22Kb / 4P	Three quadrant triacs high commutation September 1997 Rev 1.200
	BTA212X	20Kb / 4P	Three quadrant triacs high commutation October 1997 Rev 1.000
	BTA225	61Kb / 8P	Three quadrant triacs high commutation September 1997
	BTA225	17Kb / 4P	Three quadrant triacs high commutation September 1997

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