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Si8286CD-IS Fiches technique(PDF) 9 Page - Silicon Laboratories |
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Si8286CD-IS Fiches technique(HTML) 9 Page - Silicon Laboratories |
9 / 32 page 15V 9V MCU Si8286 GNDA 4 VO 11 VSSB 9 IN- 2 IN+ 1 DSAT 14 VDDA 3 VDDB 13 VMID 16 /FLT 6 NC 7 VDDB 12 /RST 5 NC 8 NC 15 VSSB 10 +3.3V 0.1uF Q1 Q2 + RAIL - RAIL DDSAT RDSAT RH 10uF 0.1uF CBL 0.1uF Place RDSAT, DDSAT, CBL as close to Q1 as possible RL Figure 3.3. Recommended Si8286 Application Circuit with RH and RL The Si828x has both inverting and non-inverting gate control inputs (IN– and IN+). In normal operation, one of the inputs is not used, and should be connected to GNDA (IN–) or VDDA (IN+) respectively for proper logic termination. The Si828x has an active low reset input (RSTb), an active high ready (RDY) push pull output, and an open drain fault (FLTb) output that requires a weak 10 kΩ pull-up resistor. The FLTb outputs from multiple Si828x devices can be connected in an OR wiring configuration to provide one single FLTb signal to the MCU. The Si828x gate driver will shut down when a fault is detected. It then provides FLTb indication to the MCU, and remains in the shutdown state until the MCU applies a reset signal. To power the Si828x, the supply for VDDA should be able to handle 10 mA of current and the supplies to VDDB, and VSSB have to be able to handle 20 mA. Each supply should have 0.1 µF bypass capacitors to provide large switching transient current. The VSSB supply is optional but it operates better with the CLMP circuit to secure the IGBT in the off state against the collector to gate Miller current. VSSB should be shorted to VMID if VSSB supply is not available. The desaturation sensing circuit consisted of the 100 pF blanking capacitor, 100 Ω current limiting resistor, and DSAT diode. These components provide current and voltage protection for the Si828x desaturation DSAT pin and it is critical to place these components as close to the IGBT as possible. Also, on the layout, make sure that the loop area forming between these components and the IGBT be minimized for optimum desaturation detection. The Si8285 has VH and VL gate drive outputs with external 10 Ω resistors to limit output gate current. The value of these resistors can be adjusted to independently control IGBT collector voltage rise and fall time. The Si8286 only has one VO gate drive output with an external 10 Ω resistor to control IGBT collector voltage rise and fall time. The CLMP output should be connected to the gate of the IGBT directly to provide clamping action between the gate and VSSB. This clamping action dissipates IGBT Miller current from collector to the gate to secure the IGBT in the off-state. 3.1.1 Power To power the Si828x, the supply for VDDA should be able to handle 10 mA of current, the VDDB, and VSSB have to be able to handle the Si828x biasing current plus the average IGBT gate current drive (see 3.3 Power Dissipation Considerations). Each supply should have 0.1 μF bypass capacitor to provide large switching transient current in parallel with a 10 μF capacitor. The VSSB supply is option- al, but it operates better with the CLMP circuit to secure the IGBT in the off state against the collector to gate Miller current. The VSSB pin should be shorted to VMID if VSSB supply is not available. 3.1.2 Inputs The Si828x has both inverting and non-inverting gate control inputs (IN– and IN+). In normal operation, one of the inputs is not used and should be connected to GNDA (IN–) or VDDA (IN+) for proper logic termination. Inputs should be driven by CMOS level push-pull output. If input is driven by the MCU GPIO, it is recommended that the MCU be located as closed to the Si828x as possible to minimize PCB trace parasitic and noise coupling to the input circuit. Si8285/86 Data Sheet Applications Information silabs.com | Smart. Connected. Energy-friendly. Preliminary Rev. 0.6 | 8 |
Numéro de pièce similaire - Si8286CD-IS |
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Description similaire - Si8286CD-IS |
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