BC847BDW1T3G datasheet(7/11 Pages) ONSEMI

No de pièce	BC847BDW1T3G

Description	Dual General Purpose Transistors

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Fabricant	ONSEMI [ON Semiconductor]

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BC846BDW1, BC847BDW1, BC848CDW1

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TYPICAL CHARACTERISTICS − BC848CDW1

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IC, COLLECTOR CURRENT (A)

Figure 23. DC Current Gain at VCE = 5 V

VCE = 5 V

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−55

°C

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VCE = 10 V

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IC, COLLECTOR CURRENT (A)

Figure 24. DC Current Gain at VCE = 10 V

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IC, COLLECTOR CURRENT (A)

Figure 25. VCE at IC/IB = 10

150

°C

25

°C

−55

°C

IC/IB = 10

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IC, COLLECTOR CURRENT (A)

Figure 26. VCE at IC/IB = 20

IC/IB = 20

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−55

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IC, COLLECTOR CURRENT (A)

Figure 27. VBE(sat) at IC/IB = 10

IC/IB = 10

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°C

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°C

−55

°C

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IC, COLLECTOR CURRENT (A)

Figure 28. VBE(sat) at IC/IB = 20

IC/IB = 20

150

°C

25

°C

−55

°C

Numéro de pièce similaire - BC847BDW1T3G

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	BC847BDW1T3G	133Kb / 10P	Dual General Purpose Transistors July, 2010 ??Rev. 7
ON Semiconductor	BC847BDW1T3G	144Kb / 11P	Dual General Purpose Transistors September, 2012 ??Rev. 9

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