Moteur de recherche de fiches techniques de composants électroniques |
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LM4868 Fiches technique(PDF) 6 Page - National Semiconductor (TI) |
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LM4868 Fiches technique(HTML) 6 Page - National Semiconductor (TI) |
6 / 28 page Typical Performance Characteristics MTE- and LQ- Specific Characteristics (Continued) LM4868LQ, LM4868MTE Power Dissipation vs Power Output LM4868MTE (Note 18) Power Derating Curve 20026761 20026759 LM4868LQ Power Derating Curve 20026769 Note 18: This curve shows the LM4868MTE’s thermal dissipation ability at different ambient temperatures given these conditions: 500LFPM + JEDEC board: The part is soldered to a 1S2P 20-lead exposed-DAP TSSOP test board with 500 linear feet per minute of forced-air flow across it. Board information - copper dimensions: 74x74mm, copper coverage: 100% (buried layer) and 12% (top/bottom layers), 16 vias under the exposed-DAP. 500LFPM + 2.5in2: The part is soldered to a 2.5in2, 1 oz. copper plane with 500 linear feet per minute of forced-air flow across it. 2.5in2: The part is soldered to a 2.5in2, 1oz. copper plane. Not Attached: The part is not soldered down and is not forced-air cooled. www.national.com 6 |
Numéro de pièce similaire - LM4868 |
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Description similaire - LM4868 |
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