© Semiconductor Components Industries, LLC, 2005

October, 2016 − Rev. 6

1

Publication Order Number:

BCW66GLT1/D

BCW66GLT1G,

SBCW66GLT1G

General Purpose Transistor

NPN Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

45

Vdc

Collector − Base Voltage

75

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

800

mAdc

Collector Current − Pulsed

1200

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to +150

°C

1. FR− 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in 99.5% alumina.

SOT−23

(TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

COLLECTOR

3

1

BASE

2

EMITTER

EG

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

Device

Package

ORDERING INFORMATION

BCW66GLT1G

SOT−23

(Pb−Free)

3,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

EG M

G

G

(*Note: Microdot may be in either location)

SBCW66GLT1G

SOT−23

(Pb−Free)

3,000/Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

BCW66GLT3G

SOT−23

(Pb−Free)

10,000/Tape & Reel

www.onsemi.com