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BC846ALT3G Fiches technique(PDF) 1 Page - ON Semiconductor |
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1 / 13 page © Semiconductor Components Industries, LLC, 1994 January, 2017 − Rev. 17 1 Publication Order Number: BC846ALT1/D BC846ALT1G Series General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO 65 45 30 Vdc Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO 80 50 30 Vdc Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 VEBO 6.0 6.0 5.0 Vdc Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM 1 2 3 COLLECTOR 3 1 BASE 2 EMITTER See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. ORDERING INFORMATION 1 XX M G G XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. www.onsemi.com |
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