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BCW30LT1G Fiches technique(PDF) 1 Page - ON Semiconductor |
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BCW30LT1G Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 7 page © Semiconductor Components Industries, LLC, 1999 November, 2016 − Rev. 4 1 Publication Order Number: BCW30LT1/D BCW30LT1G, SBCW30LT1G General Purpose Transistors PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −32 Vdc Collector − Base Voltage VCBO −32 Vdc Emitter-Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Device Package Shipping ORDERING INFORMATION SOT−23 (TO−236) CASE 318−08 STYLE 6 MARKING DIAGRAM COLLECTOR 3 1 BASE 2 EMITTER 1 C2 M G G C2 = Specific Device Code M = Date Code* G = Pb−Free Package BCW30LT1G SOT−23 (Pb−Free) 3,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. SBCW30LT1G SOT−23 (Pb−Free) 3,000/Tape & Reel www.onsemi.com |
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