2SAR523EB datasheet(2/12 Pages) ROHM

No de pièce	2SAR523EB

Description	PNP -100mA -50V General Purpose Transistor

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Fabricant	ROHM [Rohm]

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2 / 12 page

2SAR523M / 2SAR523EB / 2SAR523UB

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

-50

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-100

mA

ICP*1

-200

mA

Power dissipation

2SAR523M

PD*2

150

mW

2SAR523EB

150

2SAR523UB

200

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = -50μA

-50

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = -1mA

-50

-

V

Emitter-base breakdown voltage

BVEBO

IE = -50μA

-5

-

V

Collector cut-off current

ICBO

VCB = -50V

-

-100

nA

Emitter cut-off current

IEBO

VEB = -5V

-

-100

nA

Collector-emitter saturation voltage

VCE(sat) IC = -50mA, IB = -5mA

-

-150

-400

mV

DC current gain

hFE

VCE = -6V, IC = -1mA

120

-

560

-

Transition frequency

fT

VCE = -10V, IE = 10mA,

f = 100MHz

-

300

-

MHz

Output capacitance

Cob

VCB = -10V, IE = 0A,

f = 1MHz

-

2.0

-

pF

*1 Pw=10ms Single Pulse

*2 Each terminal mounted on a reference land.

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2/8

20151204 - Rev.002

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