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BAT54SW Fiches technique(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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BAT54SW Fiches technique(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 3 page SOT–323 (SC–70) DATA SHEET SEMICONDUCTOR BAT54SW http://www.yeashin.com 1 REV.03 20140827 DEVICE MARKING BAT54SW= B8 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage V R 30 Volts Forward Power Dissipation P F @ T A = 25°C 200 mW Derate above 25°C 1.6 mW/°C Forward Current(DC) IF 200Max mA Junction Temperature T J 125Max °C Storage Temperature Range T stg –55 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 µA) V(BR)R 30 — — Volts Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT — — 10 pF Reverse Leakage (V R = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (I F = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (I F = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (I F = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) trr — — 5.0 ns Forward Voltage (I F = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (I F = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excel- lent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc Dual Series Schottky Barrier Diodes We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. H 3 CATHODE/ANODE ANODE 1 CATHODE 2 |
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