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2SD1959 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1959 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc Product Specification isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1959 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 650V (Min) · High Switching Speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 650 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current- Continuous 5 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃ /W |
Numéro de pièce similaire - 2SD1959 |
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Description similaire - 2SD1959 |
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