2SD1362 datasheet(2/2 Pages) ISC

No de pièce	2SD1362

Description	isc Silicon NPN Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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2

isc Silicon NPN Power Transistor

2SD1362

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 30mA; IB= 0

80

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.4A

0.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.4A

1.4

V

ICBO

Collector Cutoff Current

VCB= 100V ; IE= 0

5

μ

A

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

5

μ

A

hFE-1

DC Current Gain

IC= 1A; VCE= 1V

70

240

hFE-2

DC Current Gain

IC= 4A; VCE= 1V

30

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1MHz

250

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 4V

10

MHz

Switching Times

ton

Turn-on Time

VCC= 30V, RL= 10Ω,

IB1= -IB2= 0.3A,

0.4

μ

s

tstg

Storage Time

2.5

μ

s

tf

Fall Time

0.5

μ

s



hFE-1 Classifications

O

Y

70-140

120-240

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