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TPS563219A Fiches technique(PDF) 4 Page - Texas Instruments |
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TPS563219A Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 30 page 4 TPS562219A, TPS563219A SLVSDT2 – NOVEMBER 2016 www.ti.com Product Folder Links: TPS562219A TPS563219A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings TJ = -40°C to 150°C (unless otherwise noted) (1) MIN MAX UNIT Input voltage range VIN, EN –0.3 19 V VBST –0.3 25 V VBST (10 ns transient) –0.3 27.5 V VBST (vs SW) –0.3 6.5 V VFB, PG –0.3 6.5 V SS –0.3 5.5 V SW –2 19 V SW (10 ns transient) –3.5 21 V Operating junction temperature, TJ –40 150 °C Storage temperature, Tstg –55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions TJ = –40°C to 150°C (unless otherwise noted) MIN MAX UNIT VIN Supply input voltage range 4.5 17 V VI Input voltage range VBST –0.1 23 V VBST (10 ns transient) –0.1 26 VBST(vs SW) –0.1 6 EN –0.1 17 VFB, PG –0.1 5.5 SS –0.1 5 SW –1.8 17 SW (10 ns transient) –3.5 20 TA Operating free-air temperature –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TPS562219A TPS563219A UNIT DDF (SOT) 8 PINS RθJA Junction-to-ambient thermal resistance 106.1 87.0 °C/W RθJC(top) Junction-to-case (top) thermal resistance 49.1 41.6 °C/W RθJB Junction-to-board thermal resistance 10.9 14.6 °C/W ψJT Junction-to-top characterization parameter 8.6 4.7 °C/W ψJB Junction-to-board characterization parameter 10.8 14.6 °C/W |
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