TPC8203

2002-05-17

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8203

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Small footprint due to small and thin package

Low drain−source ON resistance

Low leakage current

Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

30

V

30

V

Gate−source voltage

±20

V

D C

(Note 1)

6

Drain current

Pulse

(Note 1)

24

A

Single-device

operation (Note 3a)

1.5

Drain power

dissipation

(t = 10 s)

(Note 2a)

Single-devece value

at dual operation

(Note 3b)

1.0

W

Single-device

operation (Note 3a)

0.75

Drain power

dissipation

(t = 10 s)

(Note 2b)

Single-devece value

at dual operation

(Note 3b)

0.45

W

Single pulse avalanche energy

(Note 4)

46.8

mJ

Avalanche current

6

A

Repetitive avalanche energy

(Note 2a, Note 3b, Note 5)

0.10

mJ

Channel temperature

150

℃

Storage temperature range

−55∼150

℃

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)

and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration