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BUZ941Z-220 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BUZ941Z-220
Description  isc Silicon NPN Power Transistor
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUZ941Z-220 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BU941Z
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
400
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
1.6
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10 A; IB= 250mA
1.8
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
2.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10 A; IB= 250mA
2.5
V
ICES
Collector Cutoff Current
VCE= 500V;VBE= 0
VCE= 500V;VBE= 0;Tj=125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 450V;IB= 0
VCE= 450V;IB= 0;Tj= 125℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
20
mA
hFE
DC Current Gain
IC= 5A ; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
Pulse test：Pulse width≤300us,duty cycle ≤1.5%


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