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2SD1047E Datasheet(Fiches technique) 2 Page - Inchange Semiconductor Company Limited

Numéro de pièce 2SD1047E
Description  Silicon NPN Power Transistor
Télécharger  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1047E Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1047E Datenblatt HTML 1Page - Inchange Semiconductor Company Limited 2SD1047E Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SD1047E
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 30mA ; RBE= ∞
140
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC=5mA; IE= 0
160
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
6
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
0.6
2.5
V
VBE(on)
Base -Emitter On Voltage
IC= 1A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 80V ; IE= 0
100
μ
A
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
100
μ
A
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
100
200
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
20
COB
Output Capacitance
IE= 0;VCB= 10V;ftest= 1.0MHz
210
pF
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
15
MHz
Switching times
ton
Turn-on Time
IC= 1A ,RL= 20Ω,
IB1= IB2= 0.1A,VCC= 20V
0.26
μ
s
tstg
Storage Time
6.88
μ
s
tf
Fall Time
0.68
μ
s


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