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BC847BV Fiches technique(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

No de pièce BC847BV
Description  DUAL TRANSISTOR(NPN NPN)
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Fabricant  JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]
Site Internet  http://www.cj-elec.com/en/
Logo JIANGSU - Jiangsu Changjiang Electronics Technology Co., Ltd

BC847BV Fiches technique(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
BC847BV DUAL TRANSISTOR(NPN+NPN)
FEATURES
Epitaxial Die Construction
Complementary PNP Type Available
(BC857BV)
Ultra-Small Surface Mount Package
Marking: K4V
MAXIMUM RATINGS(
Ta=25 unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.1
A
PC
Collector Power Dissipation
0.15
W
RθJA
Thermal Resistance. Junction to Ambient Air
833
℃/W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15
nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
100
nA
DC current gain
hFE(1)
VCE=5V,IC=2mA
200
450
Collector-emitter saturation voltage
VCE(sat)
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
100
300
mV
Base-emitter saturation voltage
VBE(sat)
IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
700
900
mV
Base-emitter voltage
VBE
VCE=5V,IC=2mA
VCE=5V,IC=10mA
580
660
700
770
mV
Transition frequency
fT
VCE=5V,IC=10mA,f=100MHz
100
MHz
Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
4.5
pF
Noise Figure
NF
VCE=5V,Rs=2
KΩ,
f=1kHz,BW=200Hz
10
dB
SOT-563
JC T
www.cj-elec.com
1
A,Jun,2014
www.cj-elec.com
C,May,2015


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