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STGD4M65DF2 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STGD4M65DF2 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 19 page November 2016 DocID028676 Rev 4 1/19 This is information on a product in full production. www.st.com STGD4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 4 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGD4M65DF2 G4M65DF2 DPAK Tape and reel |
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