STD11N60DM2 datasheet(5/15 Pages) STMICROELECTRONICS

No de pièce	STD11N60DM2

Description	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

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STD11N60DM2

Electrical characteristics

DocID029387 Rev 1

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Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD(1)

Source-drain current

-

10

A

ISDM(2)

Source-drain current

(pulsed)

-

40

A

VSD(3)

Forward on voltage

VGS = 0 V, ISD = 10 A

-

1.6

V

trr

Reverse recovery

time

ISD = 10 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "Test

circuit for inductive load

switching and diode recovery

times")

-

90

ns

Qrr

Reverse recovery

charge

-

248

µC

IRRM

Reverse recovery

current

-

5.5

A

trr

Reverse recovery

time

ISD = 10 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C (see

Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

160

ns

Qrr

Reverse recovery

charge

-

664

nC

IRRM

Reverse recovery

current

-

8.3

A

Notes:

(1) Limited by maximum junction temperature.

(2) Pulse width is limited by safe operating area.

(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±250 µA, ID = 0 A

±30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

Numéro de pièce similaire - STD11N60DM2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STD11N60M2-EP	807Kb / 16P	N-channel 600 V, 0.550 (ohm) typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

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Description similaire - STD11N60DM2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STF11N60DM2	713Kb / 12P	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
	STP11N60DM2	716Kb / 12P	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
	STD5N60DM2	817Kb / 15P	N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package
	STD8N60DM2	823Kb / 15P	N-channel 600 V, 550 m(ohm) typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
	STD10N60DM2	813Kb / 14P	N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package June 2016 Rev 1
	STD12N60DM2AG	559Kb / 15P	Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package November 2019 Rev 4
	STF13N60DM2	719Kb / 13P	N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
	STF10N60DM2	711Kb / 12P	N-channel 600 V, 0.440 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package
	STD13N60M6	526Kb / 16P	N-channel 600 V, 320 m typ., 10 A, MDmesh M6 Power MOSFET in a DPAK package October 2019 Rev 1
	STL33N60DM2	784Kb / 15P	N-channel 600 V, 0.115(ohm) typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package

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