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IRFE220 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFE220
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFE220 Fiches technique(HTML) 2 Page - International Rectifier

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IRFE220
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction to Case
9.1
RthJ-PCB
Junction to PC Board
26"""
Soldered to a copper clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
2.8
ISM
Pulse Source Current (Body Diode) ➀
——
1 1
VSD
Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 2.8A, VGS = 0V ➃
trr
Reverse Recovery Time
400
nS
Tj = 25°C, IF =2.8A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
4.3
µc
VDD ≤ 50V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.25
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.80
VGS = 10V, ID = 1.8A➃
Resistance
0.92
VGS =10V, ID =2.8A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
1.5
S ( )
VDS > 15V, IDS =2.8A➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=160V, VGS=0V
250
VDS =160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
14.3
VGS =10V, ID= 2.8A
Qgs
Gate-to-Source Charge
3.0
nC
VDS =100V
Qgd
Gate-to-Drain (‘Miller’) Charge
9.0
td(on)
Turn-On Delay Time
4 0
VDD =100V, ID =2.8A,
t r
Rise Time
5 0
RG =7.5Ω
td(off)
Turn-Off Delay Time
5 0
tf
Fall Time
5 0
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
260
VGS = 0V, VDS = 25V
Coss
Output Capacitance
100
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
3 0
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad


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