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KMB9520 Fiches technique(PDF) 3 Page - Kersemi Electronic Co., Ltd.

No de pièce KMB9520
Description  Advanced high cell denity trench technology for ultra RDS(ON)
Download  4 Pages
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Fabricant  KERSEMI [Kersemi Electronic Co., Ltd.]
Site Internet  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

KMB9520 Fiches technique(HTML) 3 Page - Kersemi Electronic Co., Ltd.

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KMB9520
KERSMI ELECTRONIC CO.,LTD.
-100V P-channel MOSFET
www.kersemi.com
3
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃ unless otherwise noted
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current


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