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ISO7710FDR Fiches technique(PDF) 5 Page - Texas Instruments |
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ISO7710FDR Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 32 page 5 ISO7710 www.ti.com SLLSER9A – NOVEMBER 2016 – REVISED DECEMBER 2016 Product Folder Links: ISO7710 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) ISO7710 UNIT DW (SOIC) D (SOIC) (16-Pin) (8-Pin) RθJA Junction-to-ambient thermal resistance 94.4 146.1 °C/W RθJC(top) Junction-to-case(top) thermal resistance 57.3 63.1 °C/W RθJB Junction-to-board thermal resistance 57.1 80.0 °C/W ψJT Junction-to-top characterization parameter 40.0 9.6 °C/W ψJB Junction-to-board characterization parameter 56.8 79.0 °C/W RθJC(bottom) Junction-to-case(bottom) thermal resistance n/a n/a °C/W 6.5 Power Rating PARAMETER TEST CONDITIONS VALUE UNIT PD Maximum power dissipation VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 15 pF, input a 50 MHz 50% duty cycle square wave 50 mW PD1 Maximum power dissipation by side-1 12.5 mW PD2 Maximum power dissipation by side-2 37.5 mW |
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