IPB057N06N datasheet(2/9 Pages) INFINEON

No de pièce	IPB057N06N

Description	OptiMOSTM Power-Transistor

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Fabricant	INFINEON [Infineon Technologies AG]

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IPB057N06N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Power dissipation

P tot

T C=25 °C

83

W

T A=25 °C,

R thJA=50 K/W

3.0

Operating and storage temperature

T j, T stg

-55 ... 175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

bottom

-

1.8

K/W

Device on PCB

R thJA

minimal footprint

-

62

6 cm² cooling area

4)

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

60

-

V

Gate threshold voltage

V GS(th)

V DS=V GS, I D=36 µA

2.1

2.8

3.3

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,

T j=25 °C

-

0.5

1

µA

V DS=60 V, V GS=0 V,

T j=125 °C

-

10

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

R DS(on)

V GS=10 V, I D=45 A

-

4.9

5.7

m

W

V GS=6 V, I D=12 A

-

6.4

8.6

Gate resistance

R G

-

1.5

2.3

W

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=45 A

36

73

-

S

Value

Values

Drain-source on-state resistance

Rev.2.2

page 2

2012-12-20

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