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BD41030FJ-E2 Fiches technique(PDF) 8 Page - Rohm |
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BD41030FJ-E2 Fiches technique(HTML) 8 Page - Rohm |
8 / 25 page BD41030FJ-C BD41030HFN-C Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at Ta=25°C; VBAT =12V; unless otherwise specified) Table 6. Electrical Characteristics Parameter Symbol Min Typ Max Unit Conditions RXD (open-drain) Low level output current IOL 1.3 3.5 - mA Normal mode. VLIN = 0V VRXD = 0.4V High level leakage current IOZH -5.0 0.0 +5.0 μA Normal mode. VLIN = VBAT VRXD = 5V NWAKE High level input voltage VIH VBAT - 1.0 - VBAT + 0.3 V Low level input voltage VIL -0.3 - VBAT - 3.3 V High level leakage current IIH -5.0 0.0 +5.0 μA VNWAKE = 27V VBAT = 27V Pull-up current IIL -30 -10 -3 μA VNWAKE = 0V INH Switch-on resistance between pins BAT and INH RINH - 30 50 Ω Standby mode, Normal mode. IINH = -15mA, VBAT = 12V High level leakage current IOZH -5.0 0.0 +5.0 μA Sleep mode. VINH = VBAT = 27V LIN LIN recessive output voltage VO_rec VBAT x 0.9 - VBAT V VTXD = 5V, ILIN = 0mA LIN dominant output voltage VO_dom1 - - 1.2 V VTXD = 0V, VBAT = 7.3V VO_dom2 0.6 - - V VTXD = 0V, VBAT = 7.3V RL(LIN-BAT) = 1kΩ VO_dom3 - - 2.0 V VTXD = 0V, VBAT = 18V VO_dom4 0.8 - - V VTXD = 0V, VBAT = 18V RL(LIN-BAT) = 1kΩ High level leakage current IIH -5.0 0.0 +5.0 μA VLIN = VBAT LIN pull-up current IIL -10.0 -5.0 -2.0 μA Sleep mode. VLIN = VNSLP = 0V Pull-up resistance (Slave termination resistance to pin BAT) RSLAVE 20 30 47 kΩ Standby mode, Normal mode. VLIN = 0V, VBAT = 12V Capacitance of pin LIN (Note 2) CLIN - - 30 pF Short-circuit output current IO_SC0 40 - 200 mA VLIN = VBAT = 18V, VTXD = 0V t < tdom Input leakage current at the receiver operating (included pull-up resistor) IBUS_PAS_dom -1 - - mA VLIN = 0V VBAT = 12V VTXD = 5V Input leakage current at the receiver operating IBUS_PAS_rec - - 20 μA VLIN = 18V VBAT = 8V VTXD = 5V Loss of ground leakage current IBUS_NO_GND -1 - 1 mA VBAT = VGND = 12V VLIN = 0V to 18V Loss of battery leakage current IBUS_NO_BAT - - 100 μA VBAT = 0V VLIN = 18V Receiver threshold voltage Vth_rx VBAT x 0.4 - VBAT x 0.6 V VBAT = 7.3V to 27.0V Receiver center voltage (Note 3) Vcn_rx VBAT x 0.475 VBAT x 0.500 VBAT x 0.525 V VBAT = 7.3V to 27.0V Vcn_rx = (Vth_dom + Vth_rec)/2 Receiver threshold hysteresis voltage (Note 3) Vth_hys VBAT x 0.100 VBAT x 0.140 VBAT x 0.175 V VBAT = 7.3V to 27.0V Vth_hys = Vth_rec - Vth_dom (Note 2) It is a design guarantee parameter, and is not production tested. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays . 8/21 TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 2016.08.18 Rev.002 TSZ22111 • 14 • 001 www.rohm.com |
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