Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

AD500-9-400M-TO5 Datasheet(Fiches technique) 2 Page - Sensortechnics GmbH

Numéro de pièce AD500-9-400M-TO5
Description  0.500 mm active area
Télécharger  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  SENSORTECHNICS [Sensortechnics GmbH]
Site Internet  http://www.sensortechnics.com
Logo SENSORTECHNICS - Sensortechnics GmbH

AD500-9-400M-TO5 Datasheet(HTML) 2 Page - Sensortechnics GmbH

  AD500-9-400M-TO5 Datenblatt HTML 1Page - Sensortechnics GmbH AD500-9-400M-TO5 Datasheet HTML 2Page - Sensortechnics GmbH AD500-9-400M-TO5 Datenblatt HTML 3Page - Sensortechnics GmbH  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
11/6/2013
AVALANCHE PHOTODIODE DATA @ 23 °°°°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
M = 100 (see note 2)
---
0.8
5.0
nA
C
Capacitance
M = 100 (see note 2)
---
1.2
---
pF
VBR
Breakdown Voltage (see note 1)
ID = 2 µA
160
---
240
V
Temperature Coefficient of VBR
1.25
---
1.55
V/K
Responsivity
M = 100; = 0 V; λ = 905 nm
52
58
60
A/W
∆ƒ3dB
Bandwidth
-3dB
---
0.5
---
GHz
tr
Rise Time
M = 100
---
0.55
---
ns
Optimum Gain
50
60
---
“Excess Noise” factor
M = 100
---
2.5
---
“Excess Noise” index
M = 100
---
0.2
---
Noise Current
M = 100
---
1.0
---
pA/Hz
1/2
Max Gain
200
---
---
NEP
Noise Equivalent Power
M = 100; λ = 905 nm
---
2.0 X 10
-14
---
W/Hz
1/2
Note 1: The following different breakdown voltage ranges are available: (160 – 200 V), (200 – 240 V).
Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
TRANSIMPEDANCE AMPLIFIER DATA @ 25 °°°°C
(Vcc = +3.0 V to 5.5 V, TA = 0°C to 70°C, 100
load between OUT+ and OUT-. Typical values are at TA = 25°C, Vcc = +3.3 V)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
3
5
5.5
V
Supply Current
---
34
63
mA
Transimpedance
Differential, measured with 40 µA p-p signal
2.10
2.75
3.40
kΩ
Output impedance
Single ended per side
48
50
52
Maximum Differential Output Voltage
Input = 2 mA p-p with 100 Ω differential termination
220
380
575
mV p-p
AC Input Overload
2
---
---
mA p-p
DC Input Overload
1
---
---
mA
Input Referred RMS Noise
TO-5 package, see note 4
---
490
668
nA
Input Referred Noise Density
See note 4
---
11
---
pA/Hz
1/2
Small signal bandwidth
Source capacitance = 0.85 pF, see note 3
1.525
2.00
---
GHz
Low Frequency Cutoff
-3 dB, input < 20 µA DC
---
30
---
kHz
Transimpedance Linear Range
Peak to peak 0.95 < linearity < 1.05
40
---
---
µA p-p
Power Supply Rejection Ratio
(PSRR)
Output referred, f < 2 MHz, PSSR = -20 Log ( Vout /
Vcc)
---
50
---
dB
Note 3: Source capacitance for AD500-9-400M-TO5 is the capacitance of APD.
Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.
TRANSFER CHARACTERISTICS
The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD
(light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.
The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as
Amps/mm
2/Watts/mm2, where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the
power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 905 nm. The APD’s corresponding
responsivity is 0.58 A/W.
If energy in = 1 µW, then the current from the APD = (0.58 A/W) x (1x10
-6W) = 0.58 µA. We can then factor in the typical gain of the APD
of 100, making the input current to the amplifier 58 µA. From Fig. 5 we can see the amplifier output will be approximately 100 mV p-p.
APPLICATION NOTES
The AD500-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche
photodiode.
This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD
follows the gain curve published for the AD500-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output
signals in the range of 200 millivolts differential.
In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be
placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may
result in permanent failure of the device.
The suggested initial value for this limiting resistor is 390 KOhm.
When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency
response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth
values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise.


Html Pages

1  2  3 


Datasheet Download

Go To PDF Page


Lien URL



Privacy Policy
ALLDATASHEET.FR
AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicit   |   Contactez-nous   |   Politique de confidentialit   |   Echange de liens   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn