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AD500-8-13G Fiches technique(PDF) 2 Page - Sensortechnics GmbH

No de pièce AD500-8-13G
Description  0.500 mm active area
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Fabricant  SENSORTECHNICS [Sensortechnics GmbH]
Site Internet  http://www.sensortechnics.com
Logo SENSORTECHNICS - Sensortechnics GmbH

AD500-8-13G Fiches technique(HTML) 2 Page - Sensortechnics GmbH

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10/3/2013
AVALANCHE PHOTODIODE DATA @ 23
C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX UNITS
ID
Dark Current
M = 100 (see note 2)
---
0.5
2.0
nA
C
Capacitance
M = 100 (see note 2)
---
2.2
---
pF
VBR
Breakdown Voltage (see note 1)
ID = 2 µA
80
---
160
V
Temperature Coefficient of VBR
---
0.45
---
V/K
Responsivity
M = 100;
 = 800 nm
45
50
---
A/W
3dB
Bandwidth
-3dB
---
1.3
---
GHz
tr
Rise Time
M = 100;
 = 905 nm; RL = 50 Ω
---
0.35
---
ns
Optimum Gain
50
60
---
“Excess Noise” factor
M = 100
---
2.2
---
“Excess Noise” index
M = 100
---
0.2
---
Noise Current
M = 100
---
1.0
---
pA/Hz
1/2
Max Gain
200
---
---
NEP
Noise Equivalent Power
M = 100;
 = 905 nm
---
2.0 X 10
-14
---
W/Hz
1/2
Note 1: The following different breakdown voltage ranges are available: (80 – 120 V), (120 – 160 V).
Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.
TRANSIMPEDANCE AMPLIFIER DATA @ 25
C
(Vcc = +3.0 V to 5.5 V, TA = 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at TA = 25°C, Vcc = +3.3 V)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNITS
Supply Voltage
3
5
5.5
V
Supply Current
---
34
63
mA
Transimpedance
Differential, measured with 40 µA p-p signal
2.10
2.75
3.40
k
Output impedance
Single ended per side
48
50
52
Maximum Differential Output Voltage
Input = 2 mA p-p with 100
 differential termination
220
380
575
mV p-p
AC Input Overload
2
---
---
mA p-p
DC Input Overload
1
---
---
mA
Input Referred RMS Noise
TO-52 package, see note 4
---
490
668
nA
Input Referred Noise Density
See note 4
---
11
---
pA/Hz
1/2
Small signal bandwidth
Source capacitance = 0.85 pF, see note 3
1.525
2.00
---
GHz
Low Frequency Cutoff
-3 dB, input < 20 µA DC
---
30
---
kHz
Transimpedance Linear Range
Peak to peak 0.95 < linearity < 1.05
40
---
---
µA p-p
Power Supply Rejection Ratio
(PSRR)
Output referred, f < 2 MHz, PSSR = -20 Log (∆Vout /
∆Vcc)
---
50
---
dB
Note 3: Source capacitance for AD500-8-1.3G-MINI is the capacitance of APD.
Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.
TRANSFER CHARACTERISTICS
The circuit used is an avalanche photodiode directly coupled to a high speed data handling transimpedance amplifier. The output of the APD
(light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.
The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as
Amps/mm
2/Watts/mm2, where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the
power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 850 nm. The APD’s corresponding
responsivity is 0.4 A/W.
If energy in = 1 µW, then the current from the APD = (0.4 A/W) x (1 x 10
-6W) = 0.4 µA. We can then factor in the typical gain of the APD
of 100, making the input current to the amplifier 40 µA. From Fig. 5 we can see the amplifier output will be approximately 75 mV p-p.
APPLICATION NOTES
The AD500-8-1.3G-MINI is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche
photodiode. This device does not operate in DC mode or below 30 kHz.
This detector requires +3.0 V to +5.5 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD
follows the gain curve published for the AD500-8-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output
signals in the range of 200 millivolts differential. The APD gain is voltage and temperature dependent. Some form of temperature
compensation bias voltage control may be required.
In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be
placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may
result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm.
When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency
response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth
values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise.


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